2009. 2. 19 1/2 semiconductor technical data BC817 epitaxial planar npn transistor revision no : 5 general purpose application. switching application. features complementary to bc807. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) note : h fe (1) classification 16:100 250 , 25:160 400 , 40:250 630 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =20v, i e =0 - - 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 - - 0.1 a dc current gain (note) h fe (1) v ce =1v, i c =100ma 100 - 630 h fe (2) v ce =1v, i c =500ma 40 - - collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma - - 0.7 v base-emitter voltage v be v ce =1v, i c =500ma - - 1.2 v transition frequency f t v ce =5v, i c =10ma, f=100mhz 100 - - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 5 - pf characteristic symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5 v collector current i c 800 ma emitter current i e -800 ma collector power dissipation p c * 350 mw junction temperature t j 150 storage temperature range t stg -55 150 type BC817-16 BC817-25 BC817-40 mark 6a 6b 6c * : package mounted on 99.9% alumina 10 8 0.6mm. mark spec type name marking lot no.
2009. 2. 19 2/2 BC817 revision no : 5 c collector current i (ma) 0 10 dc current gain h fe 1000 300 collector current i (ma) c 0 collector-emitter voltage v (v) ce ce c i - v h - i 1 collector current i (ma) c 0.2 base-emitter voltage v (v) be v - i c collector current i (ma) 300 1000 0.01 ce(sat) collector-emitter saturation 12 3456 200 400 600 800 i - v cbe 0.4 0.6 0.8 1.0 3 10 30 100 300 1000 common emitter v =1v ce fe c 100 30 10 30 100 300 1000 50 500 common emitter v =1v ce ce(sat) c voltage v (v) 100 30 10 0.03 0.1 0.3 1 3 common emitter i /i =25 c b ce v =5v common emitter 500 100 30 10 30 100 10 1000 300 3 1 collector current i (ma) c c t f - i transition frequency t f (mhz) 300 ta=25 c ta=100 c ta=25 c ta=-25 c ta=100 c ta =25 c ta=- 25 c ta=25 c ta=-25 c ta=100 c ta=100 c p (mw) c 0 ambient temperature ta ( c) c p - ta collector power dissipation 25 50 75 100 125 150 175 0 100 300 500 200 400 common emitter ta=25 c 5 6 7 8 4 3 2 0 i =1ma b
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